Nanotechnology News – Latest Headlines

High-performance phototransistor based on multilayer GaTe

In new work, researchers find Ga ion vacancy is the critical factor that causes the high off-state current, low on/off ratio of GaTe FET and large hysteresis at room temperature through electrical transport measurements at variable temperatures and first-principles calculations as well.

Dec 15th, 2014

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Helping scientists see and measure at nanoscale

If seeing is believing, C.K. Choi has a passion for clarity - in a very tiny world. The assistant professor of mechanical engineering's research lies at the micro-scale, in channels no thicker than a strand of hair.

Dec 11th, 2014

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Stacking two-dimensional materials may lower cost of semiconductor devices

Researchers have found that stacking materials that are only one atom thick can create semiconductor junctions that transfer charge efficiently, regardless of whether the crystalline structure of the materials is mismatched - lowering the manufacturing cost for a wide variety of semiconductor devices such as solar cells, lasers and LEDs.

Dec 11th, 2014

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Scalable growth of high quality bismuth nanowires

Bismuth nanowires have intriguing electronic and energy-harvesting application possibilities. However, fabricating these materials with high quality and in large quantities is challenging. Researchers have now demonstrated a new technique to produce single- crystal nanowires atop arbitrary substrates, including glass, silicon, and metal, when an intermediate layer of vanadium is present.

Dec 11th, 2014

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